| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MGF9006-24 | KB | ||||
| MGF4952A | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 184 KB | 5 |  |
| MGFK25M4045 | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 184 KB | 5 | |
| MGF2430A | MITSUBISHI ELECTRIC SEMICONDUCTOR | MICROWAVE POWER GaAs FET | 264 KB | 3 | |
| mgf4934am | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) | 131 KB | 6 | |
| MGF1801B | MITSUBISHI ELECTRIC SEMICONDUCTOR | MICROWAVE POWER GaAs FET | 180 KB | 4 | |
| MGF4918D | MITSUBISHI ELECTRIC SEMICONDUCTOR | MICROWAVE POWER GaAs FET | 180 KB | 4 | |
| MGF0915A | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 114 KB | 4 | |
| MGFC36V5964A01 | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 114 KB | 4 | |
| MGF7132P-24 | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 114 KB | 4 | |
| MGF1601B | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 213 KB | 4 | |
| MGF0911A | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 216 KB | 4 | |
| MGF7134P | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 216 KB | 4 | |
| MGF0905A | MITSUBISHI ELECTRIC SEMICONDUCTOR | L,S BAND POWER GaAs FET | 316 KB | 4 | |
| MGF4910C | MITSUBISHI ELECTRIC SEMICONDUCTOR | L,S BAND POWER GaAs FET | 316 KB | 4 | |
| MGF7168C21 | MITSUBISHI ELECTRIC SEMICONDUCTOR | L,S BAND POWER GaAs FET | 316 KB | 4 | |
