| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| MGF0907B-01 | KB | ||||
| MGFS48B2122 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 2.11-2.17 GHz BAND / 60W | 110 KB | 2 |  |
| MGF0919A | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 244 KB | 4 | |
| MGF2445A | MITSUBISHI ELECTRIC SEMICONDUCTOR | MICROWAVE POWER GaAs FET | 105 KB | 2 | |
| MGFC36V5964A | MITSUBISHI ELECTRIC SEMICONDUCTOR | C band internally matched power GaAs FET | 122 KB | 3 | |
| MGFS45V2527A | MITSUBISHI ELECTRIC SEMICONDUCTOR | 2.7-3.5 GHz BAND / 30W | 125 KB | 3 | |
| MGF1302 | MITSUBISHI ELECTRIC SEMICONDUCTOR | LOW NOISE GaAs FET | 211 KB | 5 | |
| MGF0951P | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 273 KB | 6 | |
| MGF0911A-01 | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 273 KB | 6 | |
| MGFC39V7785A | MITSUBISHI ELECTRIC SEMICONDUCTOR | C band internally matched power GaAs FET | 93 KB | 2 | |
| MGF4914 | MITSUBISHI ELECTRIC SEMICONDUCTOR | C band internally matched power GaAs FET | 93 KB | 2 | |
| MGF4916 | MITSUBISHI ELECTRIC SEMICONDUCTOR | SUPER LOW NOISE InGaAs HEMT | 19 KB | 3 | |
| MGFC39V5964 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET | 99 KB | 2 | |
| MGFS48V2527 | MITSUBISHI ELECTRIC SEMICONDUCTOR | 2.5 - 2.7GHz BAND 60W GaAs FET | 443 KB | 6 | |
| MGF0910A | MITSUBISHI ELECTRIC SEMICONDUCTOR | L, S BAND POWER GaAs FET | 207 KB | 4 | |
| MGF0921A | MITSUBISHI ELECTRIC SEMICONDUCTOR | High-power GaAs FET (small signal gain stage) | 220 KB | 4 | |
