型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
PTF10045 | ERICSSON MICROELECTRONICS | 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor | 207 KB | 6 | |
PTF10107 | ERICSSON MICROELECTRONICS | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor | 83 KB | 6 | |
PTF10027 | ERICSSON MICROELECTRONICS | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor | 83 KB | 6 | |
PTF210451E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz | 263 KB | 10 | |
PTF10112 | ERICSSON MICROELECTRONICS | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor | 324 KB | 6 | |
PTF102003 | PEAK electronics GmbH | 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET | 666 KB | 6 | |
PTF10031 | ERICSSON MICROELECTRONICS | 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor | 215 KB | 6 | |
PTF10036 | ERICSSON MICROELECTRONICS | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 220 KB | 6 | |
PTF102015 | ERICSSON MICROELECTRONICS | TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391VAR
| 118 KB | 0 | |
PTF102060 | ERICSSON MICROELECTRONICS | TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391VAR
| 118 KB | 0 | |
PTFP7445PZP-4 | ERICSSON MICROELECTRONICS | TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391VAR
| 118 KB | 0 | |
PTF10053 | ERICSSON MICROELECTRONICS | 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor | 81 KB | 6 | |
PTF10137 | ERICSSON MICROELECTRONICS | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor | 175 KB | 6 | |
PTF10026 | ERICSSON MICROELECTRONICS | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor | 175 KB | 6 | |
PTFA191001E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz | 256 KB | 11 | |
PTFA261301EV1 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz | 256 KB | 11 | |