| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF10136P3A | KB | ||||
| PTF10107P2A | KB | ||||
| PTF080451E-A | KB | ||||
| PTF5649K900BYBF | KB | ||||
| PTF180601A | KB | ||||
| PTF10137P3A | KB | ||||
| PTF-130-03-S-D | KB | ||||
| PTF141301A | KB | ||||
| PTFA212001E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz | 402 KB | 11 |  |
| PTFL04BF222Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 |  |
| PTFA081501E/1 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTFA190301E/1 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTFA210701E | INFINEON | Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz | 387 KB | 10 | |
| PTF211202A-A | INFINEON | Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz | 387 KB | 10 | |
| PTF211802 | INFINEON | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | 169 KB | 8 | |
| PTF080601A-A | INFINEON | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | 169 KB | 8 | |
