| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF-561K1BT-13B14 | KB | ||||
| PTF-651M00BT-10R36 | KB | ||||
| PTF561K0000FYBF | KB | ||||
| PTF10149/12 | KB | ||||
| PTFP7453PZP-5 | KB | ||||
| PTFA212002E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz | 227 KB | 10 |  |
| PTF5610K7BT-16B14 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz | 227 KB | 10 | |
| PTFA092201E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 - 960 MHz | 379 KB | 11 | |
| PTF10138 | ERICSSON MICROELECTRONICS | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 106 KB | 6 |  |
| PTF11A | ERICSSON MICROELECTRONICS | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 106 KB | 6 | |
| PTF082001E | ERICSSON MICROELECTRONICS | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 106 KB | 6 | |
| PTF10101 | ERICSSON MICROELECTRONICS | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 106 KB | 6 | |
| PTF10135R3 | ERICSSON MICROELECTRONICS | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 106 KB | 6 | |
| PTF081301E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz | 289 KB | 11 | |
| PTFA261301E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz | 289 KB | 11 | |
| PTF5632R4BT10B14 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz | 289 KB | 11 | |
