| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTFA091201E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz | 272 KB | 10 |  |
| PTF20136 | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz | 272 KB | 10 | |
| PTFA192001E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz | 285 KB | 11 |  |
| PTF5647R5KB10R36 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz | 285 KB | 11 | |
| PTF10135-A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz | 285 KB | 11 | |
| PTF10159 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz | 285 KB | 11 | |
| PTF102093 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz | 285 KB | 11 | |
| PTFM04BB222Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 |  |
| PTF568R06KFT13B14 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF562910KBT13 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTFM04BF471Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF6550K000BYBF | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF180601C | INFINEON | LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz | 233 KB | 11 | |
| PTF080601E | INFINEON | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | 293 KB | 6 | |
| PTF10065 | ERICSSON MICROELECTRONICS | 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor | 94 KB | 6 |  |
| PTFA240451E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz | 197 KB | 10 | |
