| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF102079P1A | KB | ||||
| PTF14AE | KB | ||||
| PTFA210451E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 – 2025 MHz and 2110 – 2170 MHz | 263 KB | 10 |  |
| PTF211802E | INFINEON | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | 169 KB | 8 | |
| PTF10049P3A | INFINEON | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | 169 KB | 8 | |
| PTF10162 | ERICSSON MICROELECTRONICS | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 341 KB | 8 |  |
| PTFA210301E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 |  |
| PTF102088P1A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF102002P1A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF141501A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF08A-E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF5610KFT13 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF6510K0.1T16B14 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF102093P1A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF102098 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
| PTF102003P1A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz | 198 KB | 9 | |
