| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF211802A | INFINEON | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz | 169 KB | 8 |  |
| PTF191601E | Infineon Technologies AG | Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz | 206 KB | 10 |  |
| PTFA043002E | INFINEON | Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz | 305 KB | 10 | |
| PTF141501E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz | 292 KB | 12 | |
| PTF10119 | ERICSSON MICROELECTRONICS | 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | 141 KB | 4 |  |
| PTF10195 | ERICSSON MICROELECTRONICS | 125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor | 328 KB | 6 | |
| PTF180101S | Infineon Technologies AG | LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz | 209 KB | 10 | |
| PTF10015 | ERICSSON MICROELECTRONICS | 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor | 221 KB | 6 | |
| PTF211301A | INFINEON | LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz | 449 KB | 9 | |
| PTFA211801E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz | 583 KB | 9 | |
| PTF080901A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz | 583 KB | 9 | |
| PTF10035 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz | 583 KB | 9 | |
| PTF-40516 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz | 583 KB | 9 | |
| PTF14A-E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz | 583 KB | 9 | |
| PTF10052 | ERICSSON MICROELECTRONICS | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor | 498 KB | 6 | |
| PTF-20515D | ERICSSON MICROELECTRONICS | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor | 498 KB | 6 | |
