型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
PTF08AE | | | KB | | |
PTF102002 | | | KB | | |
PTF102028 | ERICSSON MICROELECTRONICS | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 219 KB | 7 | |
PTF210901E/1 | ERICSSON MICROELECTRONICS | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 219 KB | 7 | |
PTF180901F | INFINEON | GSM/EDGE RF Power FET | 169 KB | 2 | |
PTF102015P1A | INFINEON | GSM/EDGE RF Power FET | 169 KB | 2 | |
PTF10133 | ERICSSON MICROELECTRONICS | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor | 177 KB | 6 | |
PTF10161 | ERICSSON MICROELECTRONICS | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor | 288 KB | 7 | |
PTF180901E-A | ERICSSON MICROELECTRONICS | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor | 288 KB | 7 | |
PTF102005 | ERICSSON MICROELECTRONICS | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor | 288 KB | 7 | |
PTF10007R | ERICSSON MICROELECTRONICS | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor | 288 KB | 7 | |
PTFM04BF222Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
PTF180901E | INFINEON | GSM/EDGE RF Power FET | 169 KB | 2 | |
PTF5620000FT13 | INFINEON | GSM/EDGE RF Power FET | 169 KB | 2 | |
PTF565902BCT10B14 | INFINEON | GSM/EDGE RF Power FET | 169 KB | 2 | |
PTF5611R2KAT13B14 | INFINEON | GSM/EDGE RF Power FET | 169 KB | 2 | |