型号 |
厂家 |
描述 |
大小 |
页数 |
厂家标志 |
PTFA081501F | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz | 258 KB | 10 | |
PTFA180701E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz | 368 KB | 11 | |
PTF5151.11T13 | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz | 368 KB | 11 | |
PTFA080551E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTFP501PZP | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTFP7453PEP-5 | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTF210901A | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTF20147 | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTF10022 | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTF10049 | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | 233 KB | 11 | |
PTF080901F | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
PTF10136-B | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
PTF10149-A | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
PTF10155 | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
PTF6510K0.1%T16B14 | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
PTFPCB | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |