| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTFM04BD222Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 |  |
| PTFM04BE222Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF-657152BT-13R36 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTFA21002E | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTFA261301F | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF080101S | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz | 172 KB | 9 |  |
| PTF10122 | ERICSSON MICROELECTRONICS | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | 263 KB | 6 |  |
| PTF141501A-A | ERICSSON MICROELECTRONICS | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | 263 KB | 6 | |
| PTF562.49K1T13 | ERICSSON MICROELECTRONICS | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor | 263 KB | 6 | |
| PTFL04BF471Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTFA241301E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz | 248 KB | 12 | |
| PTF21PC | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz | 248 KB | 12 | |
| PTF080601F | INFINEON | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | 293 KB | 6 |  |
| PTF10037 | INFINEON | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | 293 KB | 6 | |
| PTF11PC | INFINEON | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | 293 KB | 6 | |
| PTF191601 | INFINEON | LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz | 61 KB | 4 | |
