| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF210451E V1 | KB | ||||
| PTF102022P1A | KB | ||||
| PTF080601A | INFINEON | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz | 293 KB | 6 |  |
| PTF080901 | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
| PTF080901A-B | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
| PTF102040 | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
| PTF11QDC | INFINEON | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz | 205 KB | 10 | |
| PTFA081501E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz | 258 KB | 10 |  |
| PTF14A | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz | 258 KB | 10 | |
| PTF191001E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz | 258 KB | 10 | |
| PTF140451E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz | 106 KB | 9 | |
| PTFM04BD471Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 |  |
| PTF10100 | ERICSSON MICROELECTRONICS | 165 Watts, 860-900 MHz LDMOS Field Effect Transistor | 163 KB | 6 |  |
| PTF102013 | ERICSSON MICROELECTRONICS | 165 Watts, 860-900 MHz LDMOS Field Effect Transistor | 163 KB | 6 | |
| PTF191601A | ERICSSON MICROELECTRONICS | 165 Watts, 860-900 MHz LDMOS Field Effect Transistor | 163 KB | 6 | |
| PTFA212001F | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz | 402 KB | 11 | |
