| 型号 | 厂家 | 描述 | 大小 | 页数 | 厂家标志 |
|---|---|---|---|---|---|
| PTF210301AA1 | KB | ||||
| PTF10125 | ERICSSON MICROELECTRONICS | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | 291 KB | 6 |  |
| PTF080901A-A | ERICSSON MICROELECTRONICS | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | 291 KB | 6 | |
| PTF080901E-A | ERICSSON MICROELECTRONICS | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | 291 KB | 6 | |
| PTF65200K00BZBF | ERICSSON MICROELECTRONICS | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | 291 KB | 6 | |
| PTF561K10BT-13B14 | ERICSSON MICROELECTRONICS | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor | 291 KB | 6 | |
| PTF040551E | INFINEON | Thermally-Enhanced High Power RF LDMOS FETs 55W, 450-500MHZ | 261 KB | 10 |  |
| PTF041501E | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz | 245 KB | 11 |  |
| PTF10135P3 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz | 245 KB | 11 | |
| PTF10019/26 | Infineon Technologies AG | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz | 245 KB | 11 | |
| PTFM04BH471Q2N34B0 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 |  |
| PTF-6571.5KBT-13R36 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF10011 | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF10019/26P3A | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF10135P3A | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
| PTF102051P1A | MURATA MANUFACTURING CO., LTD. | POSISTOR for Circuit Protection | 33 KB | 1 | |
